Techniques for improving negative bias temperature...

Details Techniques for improving negative bias temperature... Techniques for improving negative bias temperature...

2007-07-13

2009-12-08

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21637, C438S199000

Reexamination Certificate

active

07629653

ABSTRACT:
In one embodiment, an integrated circuit includes a PMOS transistor having a gate stack comprising a P+ doped gate polysilicon layer and a nitrided gate oxide (NGOX) layer. The NGOX layer may be over a silicon substrate. The integrated circuit further includes an interconnect line formed over the transistor. The interconnect line includes a hydrogen getter material and may comprise a single material or stack of materials. The interconnect line advantageously getters hydrogen (e.g., H2or H2O) that would otherwise be trapped in the NGOX layer/silicon substrate interface, thereby improving the negative bias temperature instability (NBTI) lifetime of the transistor.

REFERENCES:
patent: 5229311 (1993-07-01), Lai et al.
patent: 6071784 (2000-06-01), Mehta et al.
patent: 6774462 (2004-08-01), Tanaka et al.
patent: 7256087 (2007-08-01), Sadoughi et al.
patent: 2003/0183939 (2003-10-01), Kakamu et al.
patent: 2005/0012122 (2005-01-01), Kakamu et al.
patent: 2005/0020021 (2005-01-01), Fujiwara et al.
patent: 2005/0112817 (2005-05-01), Cheng et al.
U.S. Appl. No. 11/018,422 dated Dec. 21, 2004; 24 pages.
USPTO Requirement for Restriction/Election for U.S. Appl. No. 11/018,422 dated May 8, 2006; 5 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 11/018,422 dated Jul. 21, 2006; 12 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 11/018,422 dated Dec. 1, 2006; 9 pages.
USPTO Notice of Allowance and Fees Due for U.S. Appl. No. 11/018,422 dated Apr. 16, 2007; 7 pages.

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