Techniques for improving adhesion of silicon dioxide to titanium

Details Techniques for improving adhesion of silicon dioxide to titanium Techniques for improving adhesion of silicon dioxide to titanium

1994-04-15

1997-04-29

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438763, 438624, H01L 21443, H01L 21316

Patent

active

056248687

ABSTRACT:
The present invention is described in several embodiments depicted structures and methods to form these structures. A first embodiment is a structure having a silicon dioxide film bonded to a metal film comprising: a metal nitride film bonded to the metal film; and the silicon dioxide film bonded to the metal nitride film. A second embodiment is a structure having a silicon dioxide film bonded to a metal film comprising: a metal oxide film bonded to the metal film; and the silicon dioxide film bonded to the metal oxide film. A third embodiment is a structure having a silicon dioxide film bonded to a metal film comprising: a metal/oxide
itride film bonded to the metal film; and the silicon dioxide film bonded to the metal/oxide
itride film.

REFERENCES:
patent: 3916041 (1975-10-01), Chu et al.
patent: 4350563 (1982-09-01), Takada et al.
patent: 4448633 (1984-05-01), Shuskus
patent: 4462881 (1984-07-01), Yamamoto et al.
patent: 4713260 (1987-12-01), Roberts et al.
patent: 4821085 (1989-04-01), Haken et al.
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 4931411 (1990-06-01), Tigelaar et al.
patent: 5093710 (1992-03-01), Higuchi
patent: 5130267 (1992-07-01), Kaya et al.
patent: 5202152 (1993-04-01), Giannelis et al.
patent: 5252515 (1993-10-01), Tsai et al.
patent: 5268217 (1993-12-01), Kimock et al.
patent: 5275715 (1994-01-01), Tuttle
patent: 5326724 (1994-07-01), Wei
patent: 5416045 (1995-05-01), Kauffman et al.
patent: 5440167 (1995-08-01), Iranmanesh
Wolf et al., Si Processing for the VLSI Era, Lattice Press, 1986.
Aronson, Arnold, `The Principles of Sputtering Eq.`, Material Research Corp., 1993.
Ghandhi, Sorab K., `VLSI Fabrication Principles`, New York 1987.
Wolf, Stanley `Si Proc. For VLSI Era` vol. II Lattice Press (1990).

Affiliated with

Also associated with

Rating

Techniques for improving adhesion of silicon dioxide to titanium does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Techniques for improving adhesion of silicon dioxide to titanium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for improving adhesion of silicon dioxide to titanium will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-705367