Techniques for forming interconnects

Details Techniques for forming interconnects Techniques for forming interconnects

2007-01-22

2008-03-25

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S618000, C438S598000, C257SE21590

Reexamination Certificate

active

07348270

ABSTRACT:
A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.

REFERENCES:
patent: 5244143 (1993-09-01), Ference
patent: 5775569 (1998-07-01), Berger et al.
patent: 6105852 (2000-08-01), Cordes
patent: 6149122 (2000-11-01), Berger et al.
patent: 2007/0045515 (2007-03-01), Farnworth et al.

Affiliated with

Also associated with

Rating

Techniques for forming interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Techniques for forming interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for forming interconnects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3978434