Techniques for etching a transition metal-containing layer

Details Techniques for etching a transition metal-containing layer Techniques for etching a transition metal-containing layer

1997-12-19

2000-05-30

Utech, Benjamin L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438720, H01L 213065

Patent

active

060690356

ABSTRACT:
A method for etching at least partially through a transition metal-containing layer disposed above a substrate is disclosed. The transition metal-containing layer is disposed below an etch mask. The method includes providing a plasma processing system having a plasma processing chamber, and configuring the plasma processing chamber to etch the transition metal-containing layer. The plasma processing chamber configuring process includes configuring the plasma processing chamber to receive a source gas that includes HCl and Ar, and configuring a power supply associated with the plasma processing chamber to supply energy to strike a plasma from the source gas. The plasma processing chamber configuring process further includes configuring the plasma processing chamber to etch at least partially the transition metal-containing layer with the plasma.

REFERENCES:
patent: 4838994 (1989-06-01), Gulde et al.
patent: 4923828 (1990-05-01), Gluck et al.
patent: 5145554 (1992-09-01), Seki et al.
patent: 5269878 (1993-12-01), Page et al.
patent: 5300187 (1994-04-01), Lesk et al.
patent: 5304775 (1994-04-01), Fujiwara et al.
patent: 5318664 (1994-06-01), Saia et al.
patent: 5658820 (1997-08-01), Chung
patent: 5674357 (1997-10-01), Sun et al.
patent: 5753567 (1998-05-01), Banan et al.
PCT Notification of Transmittal of the International Search Report or the Declaration, dated Apr. 14, 1999.
J. Ruzyllo et al., "Electrical Evaluation of Wet and Dry Cleaning Procedures for Silicon Device Fabrication", May 1989, Journal of the Electrochemical Society.
K. J. Nordheden, et al., "Predictable Reactive Ion Etching of GaAs and AlGaAs in HCI/Ar RF Discharges", Feb. 1990, Journal of the Electrochemical Society.
K. Kinoshita et al., "Reactive Ion Etching of Fe-Si-Al Alloy for Thin Film Head", Nov. 1991, IEEE Transactions on Magnetics, vol. 27, No. 6.
M. J. Vasile et al., "Chemically Assisted Sputter Etching of Permalloy Using CO or CL.sub.2.sup.a) ", Jul./Aug. 1986, Journal of Vacuum Science Technology.
I. Nakatani, "Ultramicro Fabrications on Fe-Ni Alloys Using Electron-Beam Writing and Reactive-Ion Etching", Sep. 1996, IEEE Transactions on Magnetics, vol. 32, No. 5.
M. G. J. Heijman, "Reactive Sputter Etching of Magnetic Materials in an HCl Plasma", 1988, Plasma Chemistry and Plasma Processing, vol. 8, No. 4.
G. Tyndall, "UV Laser-Induced Etching of the First-Row Transition Metals", 1990, Materials Research Society Symposium, vol. 158.
G. Tyndall et al., "KrF* Laser-Induced Chemical Etching of Nickel with Br.sup.2 ", 1989, Materials Research Society Symposium, vol. 129.
F.C.M.J.M. van Delft et al., "The Etch Mechanisms of Magnetic Materials in an HCl Plasma", 1993, Journal of Nuclear Materials.
J. Ryan et al., "Reactive-Ion-Etch-Compatible Metallization for Partially Covered Contact Applications", 1988, Thin Solid Films. 166.
C. Malek et al., "Reactive Ion Etching of Multilayer Mirrors for X-Ray Projection Lithography Masks", 1991, Microelectronic Engineering 13.
B. Khamsehpour et al., "Fabrication of NiFe Thin Film Elements by Dry Etching Using CH.sub.4 /H.sub.2 /O.sub.2 ", Nov. 20, 1995, Appl. Phys. Lett. 67 (21).
T. Matthies et al., "Trilevel Reactive Ion Etching Processes for Fabrication of 60 nm Germanium Structures with Aspect Ratio", Sep./Oct. 1993, Journals of Vacuum Science Technology.
M. J. Vasile et al., "Cl.sub.2 Chemically Assisted Sputter-Etching of Permalloy", 1985, Materials Research Society Symposia Proceedings, vol. 38.
A. Scherer et al., "Fabrication of Microlasers and Microresonator Optical Switches", Dec. 25, 1989, Appl. Phys. Lett. 55 (26).
K. B. Jung et al., "High Rate Dry Etching of Ni.sub.0.8 Fe.sub.0.2 and NiFeCo", Sep. 1, 1997, Appl. Phys. Lett., vol. 71, No. 9.
F.C.M.J.M. van Delft et al., "Classification of Etch Mechanisms for Magnetic Materials", Aug. 22-27, 1993, 11.sup.th International Symp. on Plasma Chemistry, vol. 3.

Affiliated with

Also associated with

Rating

Techniques for etching a transition metal-containing layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Techniques for etching a transition metal-containing layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for etching a transition metal-containing layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1909519