Techniques for etching a low capacitance dielectric layer on a s

Details Techniques for etching a low capacitance dielectric layer on a s Techniques for etching a low capacitance dielectric layer on a s

1998-08-17

2000-09-05

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, H01L 2100

Patent

active

061142506

ABSTRACT:
A method for etching through a low capacitance dielectric layer in a plasma processing chamber. The low capacitance dielectric layer is disposed below a hard mask layer on a substrate. The method includes flowing an etch chemistry that includes N.sub.2 and H.sub.2 into the plasma processing chamber. There is included creating a plasma out of the etch chemistry. The method also includes etching, using the plasma, through the low capacitance dielectric layer through openings in the hard mask layer in the plasma processing chamber.

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Standaert et al., "High-Density Plasma Etching of Low Dielectric Constant Materials", Proceedings of the 1998 MRS Spring Symposium, San Francisco, CA, USA, Apr. 14-16, 1998, vol. 511, pp. 265-275.

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