Technique to control tunneling currents in DRAM capacitors,...

Details Technique to control tunneling currents in DRAM capacitors,... Technique to control tunneling currents in DRAM capacitors,...

2007-06-26

2007-06-26

Everhart, Caridad (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000, C257SE49003, C257SE27081

Reexamination Certificate

active

11267009

ABSTRACT:
Structures and methods are provided for the use with PMOS devices. Materials with large electron affinities or work functions are provided for structures such as gates. A memory cell is provided that utilizes materials with work functions larger than n-type doped polysilicon (4.1 eV) or aluminum metal (4.1 eV) for gates or capacitor plates.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 5408115 (1995-04-01), Chang
patent: 5530581 (1996-06-01), Cogan
patent: 5852311 (1998-12-01), Kwon et al.
patent: 5869370 (1999-02-01), Chuang et al.
patent: 5886368 (1999-03-01), Forbes et al.
patent: 5989958 (1999-11-01), Forbes
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6245613 (2001-06-01), Hsu et al.
patent: 6246089 (2001-06-01), Lin et al.
patent: 6249460 (2001-06-01), Forbes et al.
patent: 6265266 (2001-07-01), Dejenfelt et al.
patent: 6278155 (2001-08-01), Okabe et al.
patent: 6294420 (2001-09-01), Tsu et al.
patent: 6316316 (2001-11-01), Wu
patent: 6351428 (2002-02-01), Forbes
patent: 6376302 (2002-04-01), Choi
patent: 6383939 (2002-05-01), Yang et al.
patent: 6384448 (2002-05-01), Forbes
patent: 6411160 (2002-06-01), Riho et al.
patent: 6441423 (2002-08-01), Mandelman et al.
patent: 6456535 (2002-09-01), Forbes et al.
patent: 6515328 (2003-02-01), Yang et al.
patent: 6583011 (2003-06-01), Xia et al.
patent: 6639835 (2003-10-01), Forbes
patent: 6664589 (2003-12-01), Forbes et al.
patent: 6730960 (2004-05-01), Forbes
patent: 2002/0016081 (2002-02-01), Aloni et al.
patent: 2003/0001197 (2003-01-01), Chang et al.
patent: 2003/0011009 (2003-01-01), Zhang et al.
patent: 2003/0201491 (2003-10-01), Chung
“Silicon Monoxide”,CERAC, inc.-Silicon Monoxide, SIO, (2000),pp. 1-4.
Al-Ani, S.K.J. , et al., “The Effect of Temperature of the Optical Absorption Edge of Amorphous Thin Films of Silicon Monoxide”,Phys. Stat. Sol.(b) 123, (1984),653-658.
Al-Ani, S.K.J. , et al., “The optical absorption edge of amorphous thin films of silicon monoxide”,Journal of Materials Science, 19, (1984), 1737-1748.
Chand, N. , et al., “Tunability of intrinsic stress SiO/sub x/dielectric films formed by molecular beam deposition”,IEE, (1995),2 pages.
Chau, R. , et al., “30nm Physical Gate Length CMOS Tansistors with 1.0 ps n-MOS and 1.7 ps p-MOS Gate Delays”,IEEE Int. Electron, Devices Meeting, San Francisco, (Dec. 2000),pp. 45-48.
Demichelis, F. , et al., “Doped amorphous and microcrystalline silicon carbide as wide band-gap material”,Wide Band Gap Semiconducors Symposium, Mat. Res. Soc., Pittsburgh, PA, (1992), 1 page.
Eldridge, J. M., et al., “Oxidation of Plasma-Deposited a-SixC1-x: H films”,J. Electrochem. Soc., vol. 137, No. 7, (Jul. 1990),pp. 2266-2271.
Furusawa, T. , et al., “Simple, Reliable Cu/low-k Interconnect Integration Using Mechanically-strong Low-k Dielectric Material: Silicon-oxycarbide”,Proc. IEEE Int. Interconnect Technology Conf., (Jun. 2000),pp. 222-224.
Hirayama, M. , et al., “Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High-Density Krypton Plasma”,IEEE, (1999),4 pages.
Ilyas, M. , et al., “The optical absorption edge of amorphous thin films of silicon monoxide and of silicon monoxide mixed with titanium monoxide”,IEEE, (2001),1 page.
Kubaschewski, O. , et al., “Oxidation of Metals and Alloys”,Butterworths, London, (1962),pp. 53-64.
Maiti, B. , et al., “Metal Gates for Advanced CMOS Technology”,Proc, Microelectronic Device Technology III, Santa Clara, CA, 22-23 , Soc. of Photo-Optical Instrumentation Engineers, Bellingham WA,(Sep. 1999),pp. 46-57.
Renlund, G. M., “Silicon oxycarbide glasses: Part I. Preparation and chemistry”,J. Mater, Res., (Dec. 1991),pp. 2716-2722.
Renlund, G. M., “Silicon oxycarbide glasses: Part II. Structure and properties”,J. Mater. Res., vol. 6, No. 12,(Dec. 1991),pp. 2723-2734.
Robinson, G. , “Passivation hardens lasers for low-cost package”, 3 pages.
Shi, Y. , et al., “Tunneling Leakage Current in Ultrathin (less than 4nm) Nitride/Oxide Stack Dielectrics”,IEEE Electron Device Letters, 19(10), (Oct. 1998),pp. 388-390.
Skriver, H. L., et al., “Surface energy and work function of elemental metals”,Physical Review B(Condensed Matter), vol. 46, No. 11, (Sep. 15, 1992), 1 page.
Strass, A. , et al., “Fabrication and Characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry”,Thin Solid Films 349, (1999),pp. 135-146.
Sze, S. M., “Physics of Semiconductor Devices”, New York,Wiley-Interscience, ISBN: 0471842907,(1969),402-407.
Sze, S. M., “Physics of Semiconductor Devices,”,Wiley, (1981),pp. 251, 396.

Affiliated with

Also associated with

Rating

Technique to control tunneling currents in DRAM capacitors,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique to control tunneling currents in DRAM capacitors,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique to control tunneling currents in DRAM capacitors,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3821407