Technique for uniformity tuning in an ion implanter system

Details Technique for uniformity tuning in an ion implanter system Technique for uniformity tuning in an ion implanter system

2007-08-07

2007-08-07

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S442110, C250S398000, C250S39600R, C315S506000

Reexamination Certificate

active

11135307

ABSTRACT:
A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

REFERENCES:
patent: 2006/0219955 (2006-10-01), Ray

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