Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-04-08
2008-04-08
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S442110, C250S398000, C250S39600R, C315S506000
Reexamination Certificate
active
07355188
ABSTRACT:
A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
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Brennan Damian
Callahan William Gray
Chang Shengwu
England Jonathan Gerald
Evans Morgan D.
Berman Jack I.
Hashmi Zia R.
Hunton & Williams LLP/Rambus I
Varian Semiconductor Equipment Associates Inc.
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