Technique for strain engineering in silicon-based...

Details Technique for strain engineering in silicon-based... Technique for strain engineering in silicon-based...

2011-01-18

2011-01-18

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29193, C257S213000

Reexamination Certificate

active

07871877

ABSTRACT:
By incorporating a semiconductor species having the same valence and a different covalent radius compared to the base semiconductor material on the basis of an ion implantation process, a strain-inducing material may be positioned locally within a transistor at an appropriate manufacturing stage, thereby substantially not contributing to overall process complexity and also not affecting the further processing of the semiconductor device. Hence, a high degree of flexibility may be provided with respect to enhancing transistor performance in a highly local manner.

REFERENCES:
patent: 6297082 (2001-10-01), Lin et al.
patent: 2004/0206950 (2004-10-01), Suvkhanov et al.
patent: 2005/0029560 (2005-02-01), Wasshuber et al.
patent: 2005/0035409 (2005-02-01), Ko et al.
patent: 2005/0285139 (2005-12-01), Forbes
patent: 2006/0043430 (2006-03-01), Feudel et al.
patent: 2009/0194789 (2009-08-01), Griebenow et al.
patent: 102005051994 (2007-05-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 025 336.4-33 dated Nov. 3, 2008.

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