Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2005-10-11
2005-10-11
Wells, Nikita (Department: 2881)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S799000, C438S660000, C438S014000, C250S306000, C250S307000, C250S310000
Reexamination Certificate
active
06953755
ABSTRACT:
By preparing fully-embedded interconnect structure samples for a cross-section analysis by means of electron microscopy or x-ray microscopy, degradation mechanisms may be efficiently monitored. Moreover, displaying some of the measurement results as a quick motion representation enables the detection of subtle changes of characteristics of an interconnect structure in a highly efficient manner.
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Langer Eckhard
Meyer Moritz Andreas
Zschech Ehrenfried
Advanced Micro Devices , Inc.
Wells Nikita
Williams Morgan & Amerson P.C.
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