Technique for monitoring the state of metal lines in...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C438S799000, C438S660000, C438S014000, C250S306000, C250S307000, C250S310000

Reexamination Certificate

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06953755

ABSTRACT:
By preparing fully-embedded interconnect structure samples for a cross-section analysis by means of electron microscopy or x-ray microscopy, degradation mechanisms may be efficiently monitored. Moreover, displaying some of the measurement results as a quick motion representation enables the detection of subtle changes of characteristics of an interconnect structure in a highly efficient manner.

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patent: 2004/0239318 (2004-12-01), Xiao et al.
Lau et al., “In situ electron microscopy studies of electromigration in stacked Al(Cu)/Tin interconnects,”Applied Physics Letters, 76:164-66, 2000.
Meyer et al., In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures,Microelectronic Engineering, 64:375-82, 2002.
Schneider et al., “Electromigration in passivated Cu Interconnects studied by transmission x-ray microscopy,”J. Vac. Sci. Technol., 20:3089-94, 2002.
Xu et al., “Quantitative metrology study of Cu/SiO2interconnect structures using fluorescence x-ray microscopy,”Applied Physics Letters, 78:820-22, 2001.

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