Technique for locally adapting transistor characteristics by...

Details Technique for locally adapting transistor characteristics by... Technique for locally adapting transistor characteristics by...

2007-04-18

2010-06-29

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S799000, C257SE21619, C257SE21473, C257SE21593

Reexamination Certificate

active

07745334

ABSTRACT:
By performing sophisticated anneal techniques, such as laser anneal, flash anneal and the like, for a metal silicide formation, such as nickel silicide, the risk of nickel silicide defects in sensitive device regions, such as SRAM pass gates, may be significantly reduced. Also, the activation of dopants may be performed in a highly localized manner, so that undue damage of gate insulation layers may be avoided when activating and re-crystallizing drain and source regions.

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