Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-29
2009-11-17
Nguyen, Kiet T (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
Reexamination Certificate
active
07619228
ABSTRACT:
A technique for improved ion beam transport is disclosed. In one particular exemplary embodiment, the technique may be realized as an ion implantation system comprising an ion source for generating an ion beam, a mass analyzer for selecting a desired ion species from ion particles the ion beam, an ion decelerator configured to reduce an energy of ions in the ion beam, an end station for supporting at least one workpiece to be implanted with ions from the ion beam, and a neutral particle separator configured to remove neutrally-charged particles from the ion beam prior to reaching the ion decelerator.
REFERENCES:
patent: 4276477 (1981-06-01), Enge
patent: 4283631 (1981-08-01), Turner
patent: 4587432 (1986-05-01), Aitken
patent: 4899059 (1990-02-01), Freytsis et al.
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5177366 (1993-01-01), King et al.
patent: 5350926 (1994-09-01), White et al.
patent: 5811820 (1998-09-01), Kirchner et al.
patent: 5834786 (1998-11-01), White et al.
patent: 6285133 (2001-09-01), Lansford et al.
patent: 6362490 (2002-03-01), Tomita et al.
patent: 6441382 (2002-08-01), Huang
patent: 6489622 (2002-12-01), Chen et al.
patent: 6573517 (2003-06-01), Sugitani et al.
patent: 6635880 (2003-10-01), Renau
patent: 6777696 (2004-08-01), Rathmell et al.
patent: 6946667 (2005-09-01), Chen et al.
patent: 6998625 (2006-02-01), McKenna et al.
patent: 7022984 (2006-04-01), Rathmell et al.
patent: 2003/0173914 (2003-09-01), Yamashita
patent: 2004/0262542 (2004-12-01), Rathmell et al.
patent: 2005/0242294 (2005-11-01), Purser et al.
patent: 2005/0269526 (2005-12-01), Rathmell
patent: 2006/0113495 (2006-06-01), Chen et al.
patent: 2006/0169924 (2006-08-01), Purser et al.
patent: 1691395 (2006-08-01), None
patent: WO0017905 (2000-03-01), None
patent: WO02052609 (2002-07-01), None
patent: WO2004112078 (2004-12-01), None
Nguyen Kiet T
Varian Semiconductor Equipment Associates Inc.
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