Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-29
2009-06-16
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S311000, C257SE21006, C257SE21396, C438S386000
Reexamination Certificate
active
07547937
ABSTRACT:
A semiconductor memory device includes a first word-line, a first non-inverted bit-line, a first inverted bit-line, a first global interconnection layer, a first memory capacitor having a first storage electrode, a first counter electrode, and a first oxide dielectric film, a second memory capacitor having a second storage electrode, a second counter electrode, and a second oxide dielectric film, a first local interconnection layer including a first contact portion, a second contact portion, and a first non-contact portion, a first hydrogen barrier layer covering at least the first contact portion and the second contact portion of the first local interconnection layer, a first switching transistor having a first gate electrode, a second switching transistor having a second gate electrode, and a third switching transistor having a third gate electrode.
REFERENCES:
patent: 5289416 (1994-02-01), Iwai et al.
patent: 5953619 (1999-09-01), Miyazawa et al.
patent: 2002/0045311 (2002-04-01), Mikawa
Oki Semiconductor Co., Ltd.
Pert Evan
Rabin & Berdo P.C.
Wilson Scott R
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