Technique for forming embedded metal lines having increased...

Details Technique for forming embedded metal lines having increased... Technique for forming embedded metal lines having increased...

2004-12-10

2011-10-18

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S659000, C257SE21495

Reexamination Certificate

active

08039395

ABSTRACT:
An alloy forming dopant material is deposited prior to the formation of a copper line, for instance by incorporating the dopant material into the barrier layer, which is then driven into the vicinity of a weak interface by means of a heat treatment. As indicated by corresponding investigations, the dopant material is substantially transported to the weak interface through grain boundary regions rather than through the bulk copper material (copper grains), thereby enabling moderately high alloy concentrations in the vicinity of the interface while maintaining a relatively low overall concentration within the grains. The alloy at the interface reduces electromigration along the interface.

REFERENCES:
patent: 6130161 (2000-10-01), Ashley et al.
patent: 6309959 (2001-10-01), Wang et al.
patent: 6461675 (2002-10-01), Paranjpe et al.
patent: 6650957 (2003-11-01), Campbell et al.
patent: 2004/0188850 (2004-09-01), Lee et al.
patent: 2004/0259378 (2004-12-01), Chambers et al.
patent: WO 03/046978 (2003-06-01), None

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