Technique for forming contact insulation layers and silicide...

Details Technique for forming contact insulation layers and silicide... Technique for forming contact insulation layers and silicide...

2006-04-21

2010-11-23

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S382000

Reexamination Certificate

active

07838359

ABSTRACT:
A technique is provided that enables the formation of metal silicide individually for N-channel transistors and P-channel transistors, while at the same time a strain-inducing mechanism is also provided individually for each transistor type. In this way, a cobalt silicide having a reduced distance to the channel region of an NMOS transistor may be provided, while a P-channel transistor may receive a highly conductive nickel silicide, without unduly affecting or compromising the characteristics of the N-channel transistor.

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International Search Report dated Sep. 25, 2006.

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