Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-08
2008-04-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S510000, C438S649000
Reexamination Certificate
active
07354838
ABSTRACT:
By removing an outer spacer, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, a high degree of process compatibility with conventional processes is obtained, while at the same time a contact liner layer may be positioned more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region.
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Kammler Thorsten
Lenski Markus
Wei Andy
Advanced Micro Devices , Inc.
Fourson George
Parker John M.
Williams Morgan & Amerson P.C.
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