Technique for creating different mechanical strain by...

Details Technique for creating different mechanical strain by... Technique for creating different mechanical strain by...

2006-06-22

2009-10-27

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S970000, C257SE21630

Reexamination Certificate

active

07608501

ABSTRACT:
By partially removing an etch stop layer prior to the formation of a first contact etch stop layer, a superior stress transfer mechanism may be provided in an integration scheme for generating strain by means of contact etch stop layers. Thus, a semiconductor device having different types of transistors may be provided, in which a high degree of metal silicide integrity as well as a highly efficient stress transfer mechanism is achieved.

REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 7482219 (2009-01-01), Frohberg et al.
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2004/0104405 (2004-06-01), Huang et al.
patent: 2005/0093030 (2005-05-01), Doris et al.
patent: 2005/0214998 (2005-09-01), Chen et al.
patent: 2007/0249113 (2007-10-01), Grudowski et al.
patent: 102004052578 (2006-05-01), None

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