Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1999-10-14
2000-10-03
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419217, 20429803, 20429812, 20429813, 20429816, 20429819, 134 1, 134 2, C23C 1434
Patent
active
061267910
ABSTRACT:
Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.
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Hansen Keith J.
Mori Glen
Narasimhan Murali
Nulman Jaim
Pavate Vikram
Applied Materials Inc.
Diamond Alan
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