Tantalum removal during chemical mechanical polishing

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S692000, C438S693000, C252S079100

Reexamination Certificate

active

07012025

ABSTRACT:
The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

REFERENCES:
patent: 4920031 (1990-04-01), Ohno et al.
patent: 5014468 (1991-05-01), Ravipati et al.
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5453312 (1995-09-01), Haas et al.
patent: 5454844 (1995-10-01), Hibbard et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5692950 (1997-12-01), Rutherford et al.
patent: 5693563 (1997-12-01), Teong
patent: 5735963 (1998-04-01), Obeng
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5820450 (1998-10-01), Calhoun
patent: 5842910 (1998-12-01), Krywanczyk et al.
patent: 5893796 (1999-04-01), Birang et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5981454 (1999-11-01), Small
patent: 5985748 (1999-11-01), Watts et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6074949 (2000-06-01), Schonauer et al.
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6117775 (2000-09-01), Kondo et al.
patent: 6117783 (2000-09-01), Small et al.
patent: 6136714 (2000-10-01), Schutz
patent: 6143656 (2000-11-01), Yang et al.
patent: 6156661 (2000-12-01), Small
patent: 6183686 (2001-02-01), Bardus et al.
patent: 6194317 (2001-02-01), Kaisaki et al.
patent: 6218290 (2001-04-01), Schonauer et al.
patent: 6258721 (2001-07-01), Li et al.
patent: 6271416 (2001-08-01), Takagaki et al.
patent: 6313039 (2001-11-01), Small et al.
patent: 6375559 (2002-04-01), James et al.
patent: 6436830 (2002-08-01), Merchant et al.
patent: 2002/0090820 (2002-07-01), Sun et al.
patent: 1 006 166 (2000-06-01), None
patent: 1 011 131 (2000-06-01), None
patent: 1 085 067 (2001-03-01), None
patent: 1 104 020 (2001-05-01), None
patent: 1 125 999 (2001-08-01), None
patent: 1 603 558 (2001-06-01), None
patent: 2001-127018 (2001-05-01), None
patent: 2001-139937 (2001-05-01), None
patent: WO 98/04646 (1998-02-01), None
patent: WO 98/36045 (1998-08-01), None
patent: 98/41671 (1998-09-01), None
patent: 98/49723 (1998-11-01), None
patent: 00/02238 (2000-01-01), None
patent: WO 00/00561 (2000-01-01), None
patent: 00/30159 (2000-05-01), None
patent: WO 00/24842 (2000-05-01), None
US 5,985,755, 11/1999, Bajaj et al. (withdrawn)
International Search Report for PCT/US02/00062, Jul. 8, 2002.
U.S. Appl. No. 09/569,968, filed May 11, 2000, (Sun, et al.).
U.S. Appl. No. 09/968,863, filed Oct. 27, 2000, (Tsai, et al.).
U.S. Appl. No. 09/968,864, filed Oct. 27, 2000, (Sun, et al.).
U.S. Appl. No. 10/187,857, filed Jun. 27, 2002, (Tsai, et al.).
U.S. Appl. No. 10/193,810, filed Jul. 11, 2002, (Tsai, et al.).
U.S. Appl. No. 10/215,521, filed Aug. 8, 2002, (Sun, et al.).
PCT International Search Report from International Application No. PCT/US01/50150, Dated Sep. 23, 2002.
Partial Search Report (Form PCT/ISA/206—Annex) for PCT/US02/22126, dated Dec. 6, 2002.
Written Opinion from PCT International Preliminary Examining Authority for US/02/00062, dated May 12, 2003.
“Aluminum Based Multilevel Metallizations”, from Handbook of Multilevel Metallization for Integrated Circuits, Wilson & Tracy, Eds. (1993), pp. 139-140.
U.S. Appl. No. 09/401,643, filed Sep. 22, 1999.
U.S. Appl. No. 09/569,968, filed May 11, 2000.
U.S. Appl. No. 09/741,538, filed Dec. 19, 2000.
U.S. Appl. No. 09/469,709, filed Nov. 29, 2000.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Tantalum removal during chemical mechanical polishing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tantalum removal during chemical mechanical polishing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tantalum removal during chemical mechanical polishing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3534358

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.