Tantalum lanthanide oxynitride films

Details Tantalum lanthanide oxynitride films Tantalum lanthanide oxynitride films

2011-03-08

2011-03-08

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S411000, C257S516000, C257S532000, C257SE21002, C257SE21275, C257SE21396, C257SE21654, C257SE29255, C257SE29342

Reexamination Certificate

active

07902582

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a tantalum lanthanide oxynitride film.

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