Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma

Details Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma

1998-07-02

2000-07-11

Gulakowski, Randy

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 72, 216 75, C23F 110

Patent

active

060867779

ABSTRACT:
In one embodiment, the present invention relates to a method of etching tantalum disposed over a dielectric layer, involving etching at least a portion of the tantalum using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF.sub.4 and about 200 sccm to about 600 sccm of oxygen at a temperature from about 100.degree. C. to about 150.degree. C. under a pressure from about 1 torr to about 1.5 torr. In another embodiment, the present invention relates to a method of etching at least a portion of a tantalum barrier layer, the tantalum barrier layer at least partially surrounding a copper or copper alloy interconnect, involving etching at least a portion of the tantalum barrier layer using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF.sub.4 and about 200 sccm to about 600 sccm of oxygen.

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Seki, Shunji, Takashi Unagami and Bunjiri Tsujiyama, "Reactive Ion Etching Of Tantalum Pentoxide", Journal of the Electrochemical Society, Dec. 1983, pp. 2505-2506.

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