Tantalum amide complexes for depositing tantalum-containing...

Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S069000

Reexamination Certificate

active

11625918

ABSTRACT:
Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

REFERENCES:
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5820664 (1998-10-01), Gardiner et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6552209 (2003-04-01), Lei et al.
patent: 6593484 (2003-07-01), Yasuhara et al.
patent: 6960675 (2005-11-01), Chen et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Tantalum amide complexes for depositing tantalum-containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tantalum amide complexes for depositing tantalum-containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tantalum amide complexes for depositing tantalum-containing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3957019

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.