Tandem etch chamber plasma processing system

Details Tandem etch chamber plasma processing system Tandem etch chamber plasma processing system

2005-11-08

2005-11-08

Hassanzadeh, Parviz (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With measuring, sensing, detection or process control means

C156S345240, C156S345310, C156S345320, C156S345480, C118S719000, C118S7230IR

Reexamination Certificate

active

06962644

ABSTRACT:
A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.

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PCT International Search Report Dated Oct. 27, 2003, For International Application No. PCT/US 03/06716, International Filing Date Mar. 5, 2003, For Applicant Applied Materials, Inc.

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