T-gate MESFET process using dielectric film lift-off technique

Details T-gate MESFET process using dielectric film lift-off technique T-gate MESFET process using dielectric film lift-off technique

1997-09-30

1999-08-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438577, 438579, H01L 21338

Patent

active

059406976

ABSTRACT:
An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.

REFERENCES:
patent: 4700462 (1987-10-01), Beaubien et al.
patent: 5139968 (1992-08-01), Hayase et al.
patent: 5304511 (1994-04-01), Sakai
patent: 5587328 (1996-12-01), Yoshida
patent: 5776805 (1998-07-01), Kim

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