Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge
Reexamination Certificate
2006-08-29
2006-08-29
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Accelerating charge or discharge
C365S185240, C365S194000
Reexamination Certificate
active
07099215
ABSTRACT:
A memory system includes storage cells, a respective one of which is configured to store a fixed charge therein when a write voltage applied thereto is above a predetermined threshold voltage and to discharge the fixed charge therefrom when the write voltage applied thereto is below the threshold voltage. The storage cells may be charged and/or discharged at a latency that is a function of a voltage differential between the write voltage and the threshold voltage. A variable-latency write circuit for the storage cells is configured to dynamically vary the voltage differential between the write voltage and the threshold voltage to provide a variable-latency write operation that stores the fixed charge therein or discharges the fixed charge therefrom. Related methods are also discussed.
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Al-Zawawi Ahmed S.
Rotenberg Eric
Venkatesan Ravi K.
Dinh Son T.
Myers Bigel & Sibley Sajovec, PA
North Carolina State University
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