Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1996-09-12
1999-06-08
Mach, D. Margaret M.
Coating apparatus
Gas or vapor deposition
Multizone chamber
118728, 257310, C23C 1600, H01L 27108
Patent
active
059102187
ABSTRACT:
A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing the dielectric film on the substrate in the process chamber, and annealing the dielectric film in said process chamber. In particular, the dielectric film can be formed from Ta.sub.2 O.sub.5. Systems for forming the dielectric film are also disclosed.
REFERENCES:
patent: 5766360 (1998-06-01), Sato
patent: 5769588 (1998-06-01), Toshima
patent: 5769952 (1998-06-01), Komino
Caplus 1991:197622, 1991.
Caplus 1994:258897, 1994.
Caplus 1995:513462, 1995.
Inspec 94:4702250, 1994.
Inspec 94:4687689, 1994.
Hiroshi Shinriki et al., UV-O.sub.3 and Dry-O.sub.2 : Two-Step Annealed Chemical Vapor-Deposited Ta.sub.2 O.sub.5 Films for Storage Dielectrics of 64-Mb DRAM's, IEEE Transactions On Electron Devices, vol. 38, No. 3, Mar. 1991, pp. 455-462.
Shinriki et al., UV-Ozone And Dry-Oxygen: Two-Step Annealed Chemical Vapor-Deposited Tantalum Pentoxide Films For Storage Dielectrics Of 64-Mb DRAM's, (Abstract), IEEE Trans. Electron Devices (1991), vol. 38, No. 3, pp. 455-462.
Ohji et al., Improvement In Stoichiometric Composition Of CVD-Ta205 Capacitor Dielectric Films For DRAM, (Abstract), Proc.-Electrochem. Soc. (1993), 93-25 (Interconnects, Contact Metallization, and Multilevel Metallization/Reliability for Semiconductor Devices, Interconnects, and Thin Insulator Materials), pp. 400-409.
Maeda, Ozone Applied In Semiconductor Industry, (Abstract), VLSI, Kurin Tekunoroji (1995), 5, pp. 45-49.
Fujino et al., Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2,4,6,8-tetramethylcyclotetrasiloxane And Ozone, (Abstract), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, vol. 33, No. 4A, Apr. 1994, pp. 2019-2024.
Treichel et al., Deposition, Annealing, And Characterization Of Tantalum Pentoxide Films, (Abstract), Proceedings of the 3.sup.rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials, Mater. Res. Soc, vol. 282, 1993, pp. 557-568.
Ichinose et al., Preparation and Rapid Thermal Annealing Effect of (Ba, Sr)TiO.sub.3 Thin Films, Jpn. J. Appl. Phys., vol. 34, Pt. 1, No. 9B, 1995, pp. 5198-5201.
Kim Kyung-hun
Lee Moon-yong
Park In-sung
Park Young-wook
M. Mach D. Margaret
Samsung Electronics Co,. Ltd.
LandOfFree
Systems for forming films having high dielectric constants does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Systems for forming films having high dielectric constants, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems for forming films having high dielectric constants will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1681634