Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-02
2008-10-28
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S186000, C257S288000
Reexamination Certificate
active
07442597
ABSTRACT:
The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively apply strain to multiple regions of a semiconductor device. A semiconductor device having one or more regions is provided (102). A strain inducing liner is formed over the semiconductor device (104). A selection mechanism, such as a layer of photoresist or UV reflective coating is applied to the semiconductor device to select a region (106). The selected region is treated with a stress altering treatment that alters a type and/or magnitude of stress produced by the selected region (108).
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Bu Haowen
Kraft Robert
Papa Rao Satyavolu S.
Tsui Ting Y.
Brady III Wade J.
Dang Phuc T
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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