Systems and methods for reducing contact to gate shorts

Details Systems and methods for reducing contact to gate shorts Systems and methods for reducing contact to gate shorts

2011-06-28

2011-06-28

Cao, Phat X (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S586000, C438S597000

Reexamination Certificate

active

07968395

ABSTRACT:
A method for reducing contact to gate shorts in a semiconductor device and the resulting semiconductor device are described. In one embodiment, a gate is formed on a substrate, a contact is formed on the gate and the substrate, and an insulator is formed between the gate and the contact. The insulator may be formed by oxidizing the gate to form a dielectric between the contact and the gate after the contact is formed on the gate.

REFERENCES:
patent: 5792703 (1998-08-01), Bronner et al.
patent: 6274468 (2001-08-01), Hsu
patent: 6294449 (2001-09-01), Wu et al.
patent: 7294890 (2007-11-01), Lo et al.
patent: 2003/0116808 (2003-06-01), Oguchi
patent: 2003/0141554 (2003-07-01), Uehara et al.
patent: 2006/0261416 (2006-11-01), Hachimine

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