Systems and methods for mitigating variances on a patterned...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S005000, C430S945000, C382S144000, C382S145000, C716S030000

Reexamination Certificate

active

11394900

ABSTRACT:
Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.

REFERENCES:
patent: 6516085 (2003-02-01), Wiley et al.
patent: 6654489 (2003-11-01), Wiley et al.
patent: 7123356 (2006-10-01), Stokowski et al.
patent: 2004/0009416 (2004-01-01), Peterson et al.
patent: 2004/0091142 (2004-05-01), Peterson et al.
patent: 2005/0084767 (2005-04-01), Zait et al.
patent: 2006/0183025 (2006-08-01), Yang et al.
patent: 2006/0236294 (2006-10-01), Saidin et al.
patent: PCT/IL2004/000653 (2005-01-01), None

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