Systems and methods for integration of heterogeneous circuit...

Details Systems and methods for integration of heterogeneous circuit... Systems and methods for integration of heterogeneous circuit...

2005-03-01

2005-03-01

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S224000, C438S275000, C438S518000, C438S519000

Reexamination Certificate

active

06861341

ABSTRACT:
A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heterogeneous device may further comprise at least one microelectromechanical system-based element and/or at least one photodiode. In embodiments, the heterogeneous circuit devices comprise at least one CMOS transistor and at least one DMOS transistor. In embodiments, the substrate comprises a layer of silicon or a layer of p-type silicon. In other embodiments, the substrate comprises a silicon-on-insulator wafer comprising a single-crystal-silicon layer or a single-crystal-P-silicon layer, a substrate and an insulator layer therebetween.

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Quirk et al., Semiconductor Manufacturing Technology (2001), Prentice Hall, pp. 228, 229 and 348.

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