Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-26
2006-09-26
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S256000, C438S785000
Reexamination Certificate
active
07112485
ABSTRACT:
A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)4with one or more zirconium and/or hafnium precursor compounds of the formula M(NR′R″)4, wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium.
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Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
Tsai H. Jey
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