Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-05-06
2008-05-06
Pham, Hoai v (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S681000, C438S778000, C438S643000, C438S508000, C438S508000
Reexamination Certificate
active
10924096
ABSTRACT:
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
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Quick Timothy A.
Vaartstra Brian A.
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
Nguyen Dilinh
Pham Hoai v
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