Systems and methods for forming metal oxides using metal...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S785000, C118S715000

Reexamination Certificate

active

07439195

ABSTRACT:
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.

REFERENCES:
patent: 5326892 (1994-07-01), Vaartstra
patent: 5583205 (1996-12-01), Rees, Jr.
patent: 5625256 (1997-04-01), Tiedt et al.
patent: 5725827 (1998-03-01), Rhodes et al.
patent: 5726294 (1998-03-01), Rees, Jr.
patent: 5874131 (1999-02-01), Vaartstra et al.
patent: 5874379 (1999-02-01), Joo et al.
patent: 5923966 (1999-07-01), Teramoto et al.
patent: 5924012 (1999-07-01), Vaartstra
patent: 6020511 (2000-02-01), Vaartstra et al.
patent: 6030491 (2000-02-01), Vaartstra et al.
patent: 6087014 (2000-07-01), Dombrowski
patent: 6130160 (2000-10-01), Vaartstra
patent: 6136995 (2000-10-01), Nabika et al.
patent: 6159855 (2000-12-01), Vaartstra
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207297 (2001-03-01), Sabol et al.
patent: 6258467 (2001-07-01), Subramanian
patent: 6297107 (2001-10-01), Paton et al.
patent: 6319832 (2001-11-01), Uhlenbrock et al.
patent: 6326505 (2001-12-01), Vaartstra
patent: 6348412 (2002-02-01), Vaartstra
patent: 6350686 (2002-02-01), Vaartstra
patent: 6417127 (2002-07-01), Yamamoto et al.
patent: 6426307 (2002-07-01), Lim
patent: 6444041 (2002-09-01), Vaartstra
patent: 6482758 (2002-11-01), Weber et al.
patent: 6495459 (2002-12-01), Uhlenbrock et al.
patent: 6528884 (2003-03-01), Lopatin et al.
patent: 6541079 (2003-04-01), Bojarczuk, Jr. et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6548683 (2003-04-01), Vaartstra
patent: 6616986 (2003-09-01), Sherman
patent: 6620670 (2003-09-01), Song et al.
patent: 6624072 (2003-09-01), Vaartstra
patent: 6656839 (2003-12-01), Uhlenbrock et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6664186 (2003-12-01), Callegari et al.
patent: 6764672 (2004-07-01), Glazov et al.
patent: 6773495 (2004-08-01), Uhlenbrock et al.
patent: 6784049 (2004-08-01), Vaartstra
patent: 6794284 (2004-09-01), Vaartstra
patent: 6958300 (2005-10-01), Vaartstra et al.
patent: 6967159 (2005-11-01), Vaartstra
patent: 6979370 (2005-12-01), Vaartstra
patent: 6984592 (2006-01-01), Vaartstra
patent: 7041609 (2006-05-01), Vaartstra
patent: 7057244 (2006-06-01), Andreoni et al.
patent: 7087481 (2006-08-01), Vaartstra et al.
patent: 7253122 (2007-08-01), Vaartstra
patent: 2002/0013487 (2002-01-01), Norman et al.
patent: 2002/0175393 (2002-11-01), Baum et al.
patent: 2003/0118725 (2003-06-01), Shin
patent: 2004/0043635 (2004-03-01), Vaartstra
patent: 2004/0219746 (2004-11-01), Vaartstra et al.
patent: 2005/0009266 (2005-01-01), Vaartstra
patent: 2005/0221006 (2005-10-01), Vaartstra
patent: 2005/0287819 (2005-12-01), Vaartstra et al.
patent: 2006/0046522 (2006-03-01), Ahn et al.
patent: 2006/0252279 (2006-11-01), Vaartstra
patent: 0 387 892 (1990-09-01), None
U.S. Appl. No. 11/485,770, filed Jul. 13, 2006, Vaartstra.
Aspinall et al., “Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum,”Chem Vap Deposition, 2003;9(1):7-10. Published online Jan. 13, 2003.
Billman et al., “Alternate Gate Oxides For Silicon Mosfets Using High-K Dielectrics,”Mat. Res. Soc. Symp. Proc., 1999; 567:409-14.
Fukuda et al., “Physical properties and structure of rf-sputtered amorphous films in the system Al2O3—Y3O3,”J Am Ceram Soc, Apr. 4, 2002;85(4):915-20.
Hawley,The Condensed Chemical Dictionary, 10thEdition, Van Nostrand Reinhold Co., New York, 1981; 225-226.
Rees, Jr. et al., “Structural Characterization of a Tris-Agostic Lanthanoid-H-Si Interaction,”Angew: Chem. Int. Ed: Engl., 1996; 35(4):419-22.
Ritala et al., “Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources,”Science, 2000; 288:319-21.
Vehkamäki et al., “Growth of SrTiO3and BaTiO3Thin Films by Atomic Layer Deposition,”Electrochemical and Solid-State Letters, 1999; 2(10):504-6.
U.S. Appl. No. 11/881,239, filed Jul. 26, 2007, Vaartstra.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Systems and methods for forming metal oxides using metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Systems and methods for forming metal oxides using metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for forming metal oxides using metal... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3988163

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.