Systems and methods for controlling the temperature of a vapor d

Details Systems and methods for controlling the temperature of a vapor d Systems and methods for controlling the temperature of a vapor d

1996-11-13

1999-10-19

Beck, Shrive

Coating processes

Measuring, testing, or indicating

4272481, 392416, 392478, 219390, 219405, 219411, C23C 1646

Patent

active

059685875

ABSTRACT:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

REFERENCES:
patent: 3934060 (1976-01-01), Burt et al.
patent: 4002512 (1977-01-01), Lim
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4567938 (1986-02-01), Turner
patent: 4695700 (1987-09-01), Provence et al.
patent: 4742020 (1988-05-01), Roy
patent: 4872947 (1989-10-01), Wang et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4982693 (1991-01-01), Ebata
patent: 5080933 (1992-01-01), Grupen-Shemansky et al.
patent: 5306895 (1994-04-01), Ushikoshi et al.
patent: 5359693 (1994-10-01), Nenyei et al.
patent: 5436172 (1995-07-01), Moslehi
patent: 5510297 (1996-04-01), Telford et al.
patent: 5516367 (1996-05-01), Lei et al.
patent: 5545289 (1996-08-01), Chen et al.
patent: 5551982 (1996-09-01), Anderson et al.
patent: 5558717 (1996-09-01), Zhao et al.
patent: 5650082 (1997-07-01), Anderson
Wong et al., Ind. Eng. Chem. Res. 26, pp. 1117-1127, Jun. 1987.
Adams, A. C. et al., "The Deposition of Silicon Dioxide Films at Reduced Pressure," J. Electrochem. Soc.: Solid-State Science and Technology, Jun. 1979, vol. 126, No. 6, pp. 1042-1046.
Lee D. B., "Diffusion into Silicon from an Arsrenic-Doped Oxide," Solid-State Electronics, Pergamon Press, Printed in Great Britain, 1967, vol. 10, pp. 623-624. (no month).
S. M. Sze, Editor, "VLSI Technology," 1983, pp. 94, 95, 106-108, 116. (no month).
Tanikawa Eiki et al., "Doped Oxide Films by Chemical Vapor Deposition in an Evacuated System," Denki Kagaku, 1971, vol. 41, No. 7, pp. 491-497. (no month).
Vogel R. H. et al., "Electrical Properties of 10-50 nm TEOS LPCVD Films," Technical Support, Aug. 24, 1984, U. S. Army Research Office, find in DTIC (Defense Technical Information Center, Cameron Station, Alexandria, Virginia, 22304-6145, approved for public release), pp. 1-31.

Affiliated with

Also associated with

Rating

Systems and methods for controlling the temperature of a vapor d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Systems and methods for controlling the temperature of a vapor d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for controlling the temperature of a vapor d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2052595