Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-06
2009-10-27
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21679, C257SE29309
Reexamination Certificate
active
07608886
ABSTRACT:
A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory array is configured to store 4 bits of data per cell. Multi level charge techniques can be used to increase the number of bit per cell and achieve further increased density for the memory array.
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Hsu Tzu-Hsuan
Kuo Ming-Chang
Lee Ming-Hsiu
Wu Chao-I
Baker & McKenzie LLP
Budd Paul A
Jackson, Jr. Jerome
Macronix International Co. Ltd.
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