Systems and methods for a gas field ion microscope

Radiant energy – Inspection of solids or liquids by charged particles – Positive ion probe or microscope type

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07601953

ABSTRACT:
In one aspect the invention provides a gas field ion microscope that includes an ion source in connection with an optical column, such that an ion beam generated at the ion source travels through the optical column and impinges on a sample. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the invention provides methods for using the ion microscope to analyze samples and enhancing the performance of a gas field ion source.

REFERENCES:
patent: 2893624 (1959-07-01), Fricke
patent: 3121155 (1964-02-01), Berry
patent: 3602710 (1971-08-01), Mueller
patent: 3868507 (1975-02-01), Panitz
patent: 4044255 (1977-08-01), Krisch et al.
patent: 4139773 (1979-02-01), Swanson
patent: 4236073 (1980-11-01), Martin
patent: 4255661 (1981-03-01), Liebl
patent: 4352985 (1982-10-01), Martin
patent: 4451737 (1984-05-01), Isakozawa
patent: 4467240 (1984-08-01), Futamoto et al.
patent: 4633084 (1986-12-01), Gruen et al.
patent: 4638209 (1987-01-01), Asamaki et al.
patent: 4639307 (1987-01-01), Goodrich
patent: 4649316 (1987-03-01), Cleaver et al.
patent: 4721878 (1988-01-01), Hagiwara et al.
patent: 4785177 (1988-11-01), Besocke
patent: 4874947 (1989-10-01), Ward et al.
patent: 4954711 (1990-09-01), Fink et al.
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 4985634 (1991-01-01), Stengl et al.
patent: 5034612 (1991-07-01), Ward et al.
patent: 5059785 (1991-10-01), Doyle et al.
patent: 5063294 (1991-11-01), Kawata et al.
patent: 5083033 (1992-01-01), Komano et al.
patent: 5151594 (1992-09-01), McClelland
patent: 5188705 (1993-02-01), Swanson et al.
patent: 5324950 (1994-06-01), Otaka et al.
patent: 5414261 (1995-05-01), Ellisman et al.
patent: 5574280 (1996-11-01), Fujii et al.
patent: 5750990 (1998-05-01), Mizuno et al.
patent: 5783830 (1998-07-01), Hirose et al.
patent: 5976390 (1999-11-01), Muramatsu
patent: 6028953 (2000-02-01), Nakamura et al.
patent: 6042738 (2000-03-01), Casey et al.
patent: 6211527 (2001-04-01), Chandler
patent: 6268608 (2001-07-01), Chandler
patent: 6354438 (2002-03-01), Lee et al.
patent: 6395347 (2002-05-01), Adachi et al.
patent: 6414307 (2002-07-01), Gerlach et al.
patent: 6504151 (2003-01-01), Mitchell et al.
patent: 6538254 (2003-03-01), Tomimatsu et al.
patent: 6579665 (2003-06-01), Lee et al.
patent: 6581023 (2003-06-01), Kim
patent: 6700122 (2004-03-01), Matsui et al.
patent: 6753535 (2004-06-01), Rose
patent: 6791084 (2004-09-01), Shimoma et al.
patent: 6822245 (2004-11-01), Muto et al.
patent: 6875981 (2005-04-01), Nishikawa
patent: 7084399 (2006-08-01), Muto et al.
patent: 7119333 (2006-10-01), Herschbein et al.
patent: 7230244 (2007-06-01), Trotz et al.
patent: 7368727 (2008-05-01), Ward
patent: 2002/0134949 (2002-09-01), Gerlach et al.
patent: 2002/0144892 (2002-10-01), Lee et al.
patent: 2002/0170675 (2002-11-01), Libby et al.
patent: 2003/0047691 (2003-03-01), Musil et al.
patent: 2003/0062487 (2003-04-01), Hiroi et al.
patent: 2003/0174879 (2003-09-01), Chen
patent: 2004/0031936 (2004-02-01), Oi et al.
patent: 2004/0121069 (2004-06-01), Ferranti et al.
patent: 2005/0045821 (2005-03-01), Noji et al.
patent: 2006/0060777 (2006-03-01), Motoi et al.
patent: 2006/0097166 (2006-05-01), Ishitani et al.
patent: 2006/0197017 (2006-09-01), Motoi et al.
patent: 2007/0025907 (2007-02-01), Rezeq et al.
patent: 2007/0051900 (2007-03-01), Ward
patent: 197 15 226 (1998-10-01), None
patent: 197 44 126 (1999-04-01), None
patent: 0 317 952 (1989-05-01), None
patent: 0 427 532 (1991-05-01), None
patent: 0 477 992 (1992-04-01), None
patent: 1 491 654 (2004-12-01), None
patent: 1 655 265 (2006-05-01), None
patent: 2244257 (1975-04-01), None
patent: 1 604 898 (1981-12-01), None
patent: 63 045740 (1888-02-01), None
patent: 5209844 (1983-12-01), None
patent: 62 051134 (1987-03-01), None
patent: 63 040241 (1988-02-01), None
patent: 63 045740 (1988-02-01), None
patent: 63 200434 (1988-08-01), None
patent: 1-130450 (1989-05-01), None
patent: 02 087440 (1990-03-01), None
patent: 04 341734 (1992-11-01), None
patent: 04 341743 (1992-11-01), None
patent: 5275050 (1993-10-01), None
patent: 07045230 (1995-02-01), None
patent: 2789610 (1995-08-01), None
patent: 2001 176440 (2001-06-01), None
patent: 02 025488 (2002-01-01), None
patent: 2003 302579 (2003-10-01), None
patent: 98/47172 (1998-10-01), None
patent: 01/04611 (2001-01-01), None
patent: WO 2004/015496 (2004-02-01), None
patent: 2004/068538 (2004-08-01), None
patent: 2006/133241 (2006-12-01), None
Fink, H.-W., “Mono-atomic tips for scanning tunneling microscopy”, IBM J. Res. Develop. 30: 460-465 (1986).
Fink, H.-W., “Point Source for Ions and Electrons”, Physica Scripta 38: 260-263 (1988).
Binh, V.T., “In situ fabrication and regeneration of microtips for scanning tunneling microscopy”, J. Microscopy 152(2): 355-361 (1988).
Stocker, W. et al., “Low-energy electron and ion projection microscopy”, Ultramicroscopy 31: 379-384 (1989).
Bell, A.E. et al., “High-field ion sources”, Rev. Sci. Instrum. 61(1): 363-365 (1990).
Schmid, H. et al., “Combined electron and ion projection microscopy”, Appl. Surf. Sci. 67: 436-443 (1993).
Muller, H.U. et al., “Emission properties of electron point sources”, Ultramicroscopy 50: 57-64 (1993).
Horch, S. et al., “Field emission from atomic size sources”, J. Appl. Phys. 74(6): 3652-3657 (1993).
Fink, H.-W. et al., “Electron and Ion Microscopy Without Lenses”, Nanostructures and Quantum Effects (Springer-Verlag, 1994), pp. 17-27.
Edinger, K. et al., “Development of a high brightness gas field ion source”, J. Vac. Sci. Technol. B 15(6): 2365-2368 (1997).
Horiuchi, K. et al., “Emission characteristics and stability of a helium field ion source”, J. Vac. Sci. Technol. B. 6(3): 937-940 (1988).
Melngailis, J., “Focused ion beam technology and applications”, J. Vac. Sci. Technol. B 5(2): 469-495 (1987).
Fu, T.-Y. et al., “Method of creating a Pd-covered single-atom sharp W pyramidal tip: Mechanism and energetics of its formation”, Phys. Rev. B 64: 113401-1-4 (2001).
Lucier, A.-S., “Preparation and Characterization of Tungsten Tips Suitable for Molecular Electronics Studies”, excerpts from MSc Thesis, McGill University, 2004.
Fotino, M., “Tip sharpening by normal and reverse electrochemical etching”, Rev. Sci. Instrum. 64(1): 159-167 (1993).
Wengelnik, H. et al., “Oxygen-induced sharpening process of W(111) tips for scanning tunneling microscope use,” J. Vac. Sci. Technol. A 8(1): 438-440 (1990).
Rezeq, M. et al., “Sharpening of a Field of Ion Microscope (FIM) Tungsten Tip by the Controlled Interation of Nitrogen with the Tip Surface Atoms,” Abastract from APS March Meeting (2004).
McGuinness, P.E., “Seeing at Atomic Resolution is Believing: Welcome the Helium Ion Microscope”, Scanning 27(6): 323 (2005).
Notte, J. et al., “Sample Interaction and Contrast Mechanisms of the Helium Ion Microscope” (Scanning Conference, Apr. 2006).
Notte, J.A. et al., “An Introduction to Helium Ion Microscopy and its Nanotechnology Applications” (NanoScience and Technology Institute, May 2006).
Ward, B.W. et al., “The Helium Ion Microscope: A New Tool for Nanoscale Microscopy and Metrology” (Electron, Ion, and Photon Beam Nanotechnology Conference, May 2006).
Morgan, J. et al., “An Introduction to the Helium Ion Microscope” (Microscopy Today, Jul. 2006).
Hill, R. et al., “The ALIS He Ion Source and its Application to High Resolution Microscopy” (Seventh International Conference on Charged Particle Optics, Jul. 2006).
Notte, J. et al., “An Introduction to Helium Ion Microscopy” (Microscopy and Micro-Analysis, Jul. 2006).
“An Introduction to the Helium Ion Microscope” (Materials Research Society Meeting, Nov. 2006).
J. Melngailis, “Ion Sources for Nanofabrication & High Resolution Lithography,” IEEE Proceeding

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Systems and methods for a gas field ion microscope does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Systems and methods for a gas field ion microscope, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for a gas field ion microscope will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4075056

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.