Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Reexamination Certificate
2006-11-28
2006-11-28
Kang, Donghee (Department: 2811)
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
C216S067000, C216S074000, C216S079000, C134S001100, C134S001200, C134S001300, C134S022140, C438S905000
Reexamination Certificate
active
07140374
ABSTRACT:
A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
REFERENCES:
patent: 5098516 (1992-03-01), Norman
patent: 5256565 (1993-10-01), Bernhardt
patent: 5387315 (1995-02-01), Sandhu
patent: 5968847 (1999-10-01), Ye
patent: 6051496 (2000-04-01), Jang
patent: 6056864 (2000-05-01), Cheung
patent: 6096230 (2000-08-01), Schatz et al.
patent: 6221775 (2001-04-01), Ference et al.
patent: 6234870 (2001-05-01), Uzoh et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6350364 (2002-02-01), Jang
patent: 6350664 (2002-02-01), Haji et al.
patent: 6352081 (2002-03-01), Lu et al.
patent: 6383935 (2002-05-01), Lin et al.
patent: 6417093 (2002-07-01), Xie et al.
patent: 6440840 (2002-08-01), Chen
patent: 6482755 (2002-11-01), Ngo et al.
patent: 6600229 (2003-07-01), Mukherjee et al.
patent: 6699399 (2004-03-01), Qian et al.
patent: 6767829 (2004-07-01), Akahori
patent: 2001/0015175 (2001-08-01), Masuda et al.
patent: 2001/0018271 (2001-08-01), Yanagisawa
patent: 2003/0029473 (2003-02-01), Sun
patent: 2004/0242012 (2004-12-01), Ikeda
patent: 1 041 614 (2000-10-01), None
patent: 1 081 751 (2001-03-01), None
patent: 1 320 128 (2003-06-01), None
patent: 11 067766 (1999-03-01), None
patent: WO 99/46812 (1999-09-01), None
patent: WO 00/59005 (2000-10-01), None
patent: WO 02/37541 (2002-05-01), None
patent: WO 03/026004 (2003-03-01), None
Tegal Corporation, “Enabling a Wireless World”, p. 1, http://www.tegal.com/.
Tegal Corporation, “Corporate Information”, pp. 1-7, http://www.tegal.com/corp/corpinfo.html.
Tegal Corporation, “Products and Services”, p. 1, http://www.tegal.com/prod—srvcs/products—serv.html.
Tegal Corporation, “Products and Services, 6500 Hre Series”, p. 1-3, http://www.tegal.com/prod—srvcs/6500—prod.html.
Tegal Corporation, “Products and Services, 900 Series”, p. 1-4, http://www.tegal.com/prod—srvcs/900—prod.html.
Tegal Corporation, “Products and Services, Tegal i90X-The Next Generation in Plasma Etch Technology”, p. 1-4, http://www.tegal.com/prod—srvcs/i90x—data—sheet.html.
International Search Report (5 pages) Feb. 14, 2006.
Nagraj S. Kulkrani, Robert T. DeHoff, “Application of Volatility Diagrams for Low Temperature, Dry Etching, and Planarization of Copper”, Journal of The Electromechanical Society, 2002, pp. G620-G632.
Lynn R. Allen, John M. Grant, “Tungsten plug etchback and substrate damage measured by atomic force microscopy”, J. Vac. Sci. Technol. May/Jun. 1995, pp. 918-922.
N. Hosoi, Y. Ohshita, “Plasma Etching of Copper Films Using IR Light Irradiation”, Mat. Res. Soc. Symp. Proc. vol. 337, 1995, pp. 201-205.
Y. Ohshita, N. Hosoi, “Lower temperature plasma etching of Cu using IR light irradiation”, Thin Solid Films, 1995.
William F. Marx, Yunju Ra, Richard Yang, Ching-Hwa Chen, “Plasma and processing effects of electrode spading for tungsten etchback using a bipolar electrostatic wafer clamp”, J. Vac. Sci. Technol., Nov./Dec. 1994, pp. 3087-3090.
J. Farkas,K.-M. Chi, M. J. Hampden-Smith, T.T. Kodas, “Low-temperature copper etching via reactions with CI2and Pet3under ultrahigh vacuum conditions,” American Institute of Physics, Feb. 1, 1993, pp. 1455-1460.
David T. Price, Ronald J. Gutmann, Shyam P. Murarka, “Damascene copper interconnects with polymer ILDs”, 1997 Thin Solid Films, pp. 523-528.
Kazuhide Ohno, Masaaki Sato, Yoshinobu Arita, “Reactive Ion Etching of Copper Films, in SiCl4and N2Mixture”, Japanese Journal of Applied Physics, Jun. 1989, No. 6, Part 2, pp. 1070-1072.
Seongju Park, T.N. Rhodin, L.C. Rathbun, “Halide formation and etching of Cu thin films with Cl2and Br2”, American Vacuum Society, Mar./Apr. 1986, pp. 168-172.
Lynn R. Allen, “Tungsten Plug Etchback in a TCP Etcher”, Sharp Electronics Technology, Inc., pp. 255-263.
K. Mosig, T. Jacobs, P. Kofron, M. Daniels, K. Brennan, A. Gonzales, R. Augur, J. Wetzel, R. Havemann, A. Shiota, “Single and Dual Damascene Integration of a Spin-on Porous Ultra low-k Material”,IEEE, 2001 pp. 292-294.
Bailey III Andrew D.
Howald Arthur M.
Kim Yun-sang
Lohokare Shrikant P.
Kang Donghee
Lam Research Corporation
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