System for improving thermal stability of copper damascene...

Details System for improving thermal stability of copper damascene... System for improving thermal stability of copper damascene...

2005-06-07

2005-06-07

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S643000

Reexamination Certificate

active

06903000

ABSTRACT:
Disclosed is a system for fabricating a semiconductor device (100). An interconnect structure (110) is formed on the semiconductor device (100) and a cap (112) is deposited over the interconnect structure (110). The interconnect structure (110) is annealed with the overlying cap (112) in place. The cap (112) is then removed after the interconnect structure (110) is annealed.

REFERENCES:
patent: 5668055 (1997-09-01), Xu et al.
patent: 5814557 (1998-09-01), Venkatraman et al.
patent: 5956612 (1999-09-01), Elliott et al.
patent: 6404053 (2002-06-01), Givens
patent: 6426293 (2002-07-01), Wang et al.
patent: 05-243226 (1993-09-01), None

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