System for igniting a plasma for thin film processing

Details System for igniting a plasma for thin film processing System for igniting a plasma for thin film processing

1991-08-09

1994-02-22

Reynolds, Bruce A.

Electric heating

Metal heating

By arc

31511121, 20429808, 31323131, H01J 724

Patent

active

052889718

ABSTRACT:
A system for igniting a plasma in thin film processing is shown whereby matching network impedances are varied to effect voltage changes. Shunt and series capacitors vary around a limited range so as to achieve substantially all possibilities. A programmed routine of varying in phase, out of phase, and 90.degree. apart in phase is accomplished with a range +/-10% of full variation around some prior value likely to support ignition.

REFERENCES:
patent: 3569777 (1971-03-01), Beaudry
patent: 3616405 (1971-10-01), Beaudry
patent: 3704219 (1972-11-01), McDowell
patent: 3763031 (1973-10-01), Scow et al.
patent: 4032862 (1977-06-01), Huchital et al.
patent: 4306175 (1981-12-01), Schleicher et al.
patent: 4629887 (1986-12-01), Bernier
patent: 4629940 (1986-12-01), Gagne et al.
patent: 4803405 (1989-02-01), Nakano et al.
patent: 4956582 (1990-09-01), Bourassa
patent: 4990859 (1991-02-01), Bouyer et al.
patent: 5077499 (1991-12-01), Oku
patent: 5116482 (1992-05-01), Setoyama et al.
patent: 5118996 (1992-06-01), El-Hamamsy et al.
patent: 5140223 (1992-08-01), Gesche et al.
Norstrom, "Experimental and Design Information For Calculating Impedance Matching Networks For Use In RF Sputtering and Plasma Chemistry", Oct. 1979.
Mazza, "Automatic Impedance Matching System for RF Sputtering", IBM J. Res. Develop., vol. 14, No. 2, Mar. 1970.
Halperin et al, "Automatic RF Sputtering System", J. Vac. Sci. Tech., 15(1), Jan.Feb. 1978.
Rahaim, "Automatic Tuning Controller for Anode Tuned Sputtering System", IBM Tech. Disclosure vol. 19, No. 11, Apr. 1977.

Affiliated with

Also associated with

Rating

System for igniting a plasma for thin film processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System for igniting a plasma for thin film processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System for igniting a plasma for thin film processing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-173356