System for high-precision double-diffused MOS transistors

Details System for high-precision double-diffused MOS transistors System for high-precision double-diffused MOS transistors

2005-03-15

2005-03-15

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S279000, C438S301000

Reexamination Certificate

active

06867100

ABSTRACT:
The present invention provides a system for efficiently producing versatile, high-precision MOS device structures in which straight regions dominate the device's behavior, providing minimum geometry devices that precisely match large devices, in an easy, efficient and cost-effective manner. The present invention provides methods and apparatus for producing double diffused semiconductor devices that minimize performance impacts of end cap regions. The present invention provides a MOS structure having a moat region (404, 516, 616), and an oxide region (414, 512, 608) overlapping the moat region. A double-diffusion region (402, 504, 618) is formed within the oxide region, having end cap regions (406, 502, 620) that are effectively deactivated utilizing geometric and implant manipulations.

REFERENCES:
patent: 4078947 (1978-03-01), Johnson et al.
patent: 5523599 (1996-06-01), Fujishima et al.

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