System for characterization of low-k dielectric material damage

Details System for characterization of low-k dielectric material damage System for characterization of low-k dielectric material damage

2005-10-26

2009-08-18

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257SE21524, C324S548000

Reexamination Certificate

active

07576357

ABSTRACT:
A method of detecting damage to at least one dielectric layer in an IC die by determining a capacitance factor. The capacitance factor can be used to determine damage in a low-k dielectric material. A system for detecting damage can include a conductive line structure for measuring capacitance and software or a device for determining the capacitance to determine the damage.

REFERENCES:
patent: 6787803 (2004-09-01), Yao et al.
patent: 2005/0024077 (2005-02-01), Huang et al.
patent: 2005/0194649 (2005-09-01), Oki
Iacopi, F. et al., “Processing damage and electrical performance of porous dielectrics in narrow spaced interconnects,”Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics—2004, Symposium held Apr. 13-15, 2004, 8 pages, Materials Research Society, Warrendale, PA.

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