Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-09-17
2009-11-03
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S201000, C365S230060
Reexamination Certificate
active
07613031
ABSTRACT:
Circuits, systems, and methods are disclosed for SRAM memories. An SRAM includes memory cells wherein read stability and write stability can be modified by adjusting a well bias signal operably coupled to an N-well of the memory cell. The well bias signal is generated at VDD or at a bias offset from VDD for both the read and the write operations. The memory cells may be adjusted for operation by designing the memory device to be stable relative to local parameter variations with a well bias substantially equal to VDD. The memory cells are then tested for stable read operations and stable write operations. If the write operations are unstable or the read operations are unstable, the well bias is modified and the memory cells are tested again.
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Farrar Paul
Forbes Leonard
Hanafi Hussein I.
Hoang Huan
Micro)n Technology, Inc.
TraskBritt
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