Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-12-18
2007-12-18
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257S021000
Reexamination Certificate
active
10998149
ABSTRACT:
A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.
REFERENCES:
patent: 2003/0160176 (2003-08-01), Vispute et al.
patent: 2005/0029089 (2005-02-01), Wang et al.
Chang, K.S. et al., “Multimode Quantitative Scanning Microwave Microscopy of in situ Grown Epitaxial Ba1−xSrxTiO3Composition Spreads”,Applied Physics Letters, vol. 79, No. 26, Dec. 24, 2001, pp. 4411-4413.
Chen, C. et al., Combinatorial Ion Synthesis and Ion Beam Analysis of Materials Libraries, pp. 177-212.
Takeuchi, I. et al., “Monolithic Multichannel Ultraviolet Detector Arrays and Continuous Phase Evolution in MgxZn1−xO Composition Spreads”,Journal of Applied Physics, vol. 94, No. 11, Dec. 1, 2003, pp. 7336-7340.
Takeuchi, I., et al., “Identification of Novel Compositions of Ferromagnetic Shape-Memory Alloys Using Composition Spreads”,Nature Materials, vol. 2, Feb. 2003, pp. 180-184.
Chang Kao-Shuo
Takeuchi Ichiro
Venkatesan Thirumalai Venky
Vispute Ratnakar D.
Yang Wei
Smith Bradley K.
Squire Sanders & Dempsey LLP
University of Maryland College Park
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