System and method of fabrication and application of...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S021000

Reexamination Certificate

active

10998149

ABSTRACT:
A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.

REFERENCES:
patent: 2003/0160176 (2003-08-01), Vispute et al.
patent: 2005/0029089 (2005-02-01), Wang et al.
Chang, K.S. et al., “Multimode Quantitative Scanning Microwave Microscopy of in situ Grown Epitaxial Ba1−xSrxTiO3Composition Spreads”,Applied Physics Letters, vol. 79, No. 26, Dec. 24, 2001, pp. 4411-4413.
Chen, C. et al., Combinatorial Ion Synthesis and Ion Beam Analysis of Materials Libraries, pp. 177-212.
Takeuchi, I. et al., “Monolithic Multichannel Ultraviolet Detector Arrays and Continuous Phase Evolution in MgxZn1−xO Composition Spreads”,Journal of Applied Physics, vol. 94, No. 11, Dec. 1, 2003, pp. 7336-7340.
Takeuchi, I., et al., “Identification of Novel Compositions of Ferromagnetic Shape-Memory Alloys Using Composition Spreads”,Nature Materials, vol. 2, Feb. 2003, pp. 180-184.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

System and method of fabrication and application of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method of fabrication and application of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method of fabrication and application of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3847439

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.