System and method for stress free conductor removal

Details System and method for stress free conductor removal System and method for stress free conductor removal

2007-05-15

2007-05-15

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S631000

Reexamination Certificate

active

10769522

ABSTRACT:
A system and method for forming a semiconductor in a dual damascene structure including receiving a patterned semiconductor substrate. The semiconductor substrate having a first conductive interconnect material filling multiple features in the pattern. The first conductive interconnect material having an overburden portion. The over burden portion is planarized. The over burden portion is substantially entirely removed in the planarizing process. A mask layer is reduced and a subsequent dielectric layer is formed on the planarized over burden portion. A mask is formed on the subsequent dielectric layer. One or more features are formed in the subsequent dielectric layer and the features are filled with a second conductive interconnect material.

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