System and method for serial ion implanting productivity...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S442110

Reexamination Certificate

active

07019315

ABSTRACT:
An ion implantation apparatus is provided for workpiece handling. The apparatus includes a plurality of scan systems for scanning workpieces in an ion implanting beam, a plurality of exchangers for moving the workpieces to and from the scan systems, and a system controller for positioning one of the workpieces for scanning in the ion implanting beam by one of the scan systems, sensing completion of the ion beam scanning for the one workpiece and simultaneously positioning another of the workpieces for scanning in the ion implanting beam by another of the scan systems so that the workpieces are continuously presented to the ion implanting beam. The apparatus provides continuous implantation relative to the beam, thus enabling wafer exchange to occur in parallel with the implantation process. As a result, significant system productivity improvement and wafer throughput will be realized.

REFERENCES:
patent: 5929456 (1999-07-01), Tamai

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