System and method for selective etching of silicon nitride...

Details System and method for selective etching of silicon nitride... System and method for selective etching of silicon nitride...

2011-07-12

2011-07-12

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Nongaseous phase etching of substrate

Recycling, regenerating, or rejunevating etchant

C216S103000, C438S745000

Reexamination Certificate

active

07976718

ABSTRACT:
A system (FIG.5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

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