System and method for reducing process-induced charging

Details System and method for reducing process-induced charging System and method for reducing process-induced charging

2007-08-28

2007-08-28

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C438S381000, C257SE21577, C257SE21646

Reexamination Certificate

active

11146126

ABSTRACT:
A semiconductor device includes a substrate, a memory cell formed on the substrate, and a contact to the substrate. The contact is formed in an area away from the memory cell and functions to raise the potential of the substrate.

REFERENCES:
patent: 4734384 (1988-03-01), Tsuchiya
patent: 4786954 (1988-11-01), Morie et al.
patent: 4830978 (1989-05-01), Teng et al.
patent: 5021854 (1991-06-01), Huth
patent: 5200353 (1993-04-01), Inuishi
patent: 5286982 (1994-02-01), Ackley et al.
patent: 5978258 (1999-11-01), Manning
patent: 6291307 (2001-09-01), Chu et al.
patent: 6635528 (2003-10-01), Gilbert et al.
2002 IEEE International Solid-State Circuits Conference, Session 6, “SRAM and Non-Volatile Memories,” Feb. 4, 2004, 6 pages.
2002 IEEE International Solid-State Circuits Conference, 23 pages.

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