Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-11
2009-02-10
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S297000, C438S430000, C438S439000, C438S589000, C257SE21429, C257SE21629
Reexamination Certificate
active
07488647
ABSTRACT:
A system and method is disclosed that prevents the formation of a vertical bird's beak structure in the manufacture of a semiconductor device. A polysilicon filled trench is formed in a substrate of the semiconductor device. One or more composite layers are then applied over the trench and the substrate. A mask and etch process is then applied to etch the composite layers adjacent to the polysilicon filled trench. A field oxide process is applied to form field oxide portions in the substrate adjacent to the trench. Because no field oxide is placed over the trench there is no formation of a vertical bird's beak structure. A gate oxide layer is applied and a protection cap is formed over the polysilicon filled trench to protect the trench from unwanted effects of subsequent processing steps.
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Fanling Yang et al., “Characterization of Collector-Emitter Leakage in Self-Aligned Double-Poly Bipolar Junction Transistors”, Tektronix Incorporated, Integrated Circuit Operations, Beaverton, Oregon 97077, J. Electrochem. Soc., vol. 140, No. 10, Oct. 1993, The Electrochemical Society, Inc., pp. 3033-3037.
Dark Charles A.
Strachan Andy
Lindsay, Jr. Walter L
National Semiconductor Corporation
Pompey Ron E
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