Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-08-16
2005-08-16
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S194000, C365S233100, C365S236000
Reexamination Certificate
active
06930944
ABSTRACT:
A delay device is added to the addressing and refreshing circuitry of a DRAM array including DRAM devices less volatile than conventional DRAM devices and, thus, need not be refreshed as often. The delay device is connected to intercept refresh signals generated by a conventional DRAM refresh controller and initiates a refresh cycle after disregarding a predetermined number of refresh signals generated by the refresh controller whose total duration equals the interval by which the less volatile DRAM devices must be refreshed. The delay device also is adapted to power off circuitry needed to address the DRAM devices when the DRAM devices are not being refreshed or otherwise accessed. Additional circuitry is added to selectively power on only specific addressing devices actually needed to address those certain portions of the array being refreshed at that time.
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Dinh Son T.
Dorsey & Whitney LLP
Micro)n Technology, Inc.
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