System and method for plasma induced modification and...

Details System and method for plasma induced modification and... System and method for plasma induced modification and...

2007-03-27

2007-03-27

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S725000

Reexamination Certificate

active

10983345

ABSTRACT:
Novel interconnect structures possessing a OSG or polymeric-based (90 nm and beyond BEOL technologies) in which advanced plasma processing is utilized to reduce post lithographic CD non-uniformity (“line edge roughness”) in semiconductor devices. The novel interconnect structure has enhanced liner and seed conformality and is therefore capable of delivering improved device performance, functionality and reliability.

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